IXFK30N110P

Obsolete

IXYS

MOSFET N-CH 1100V 30A TO264AA

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Obsolete

IXYS

MOSFET N-CH 1100V 30A TO264AA

Technical Specifications

Parameters and characteristics for this part

Specification	IXFK30N110P

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	1100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	235 nC
Input Capacitance (Ciss) (Max) @ Vds	13600 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-264AA, TO-264-3
Power Dissipation (Max)	960 W
Rds On (Max) @ Id, Vgs	360 mOhm
Supplier Device Package	TO-264AA (IXFK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	6.5 V

Part	Technology	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Package / Case	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]
IXYS IXFK30N110P	MOSFET (Metal Oxide)	30 A	Through Hole	TO-264AA (IXFK)	1100 V	235 nC	360 mOhm	6.5 V	960 W	TO-264-3 TO-264AA	N-Channel	13600 pF	10 V	-55 °C	150 °C	30 V
IXYS IXFK30N100Q2	MOSFET (Metal Oxide)	30 A	Through Hole	TO-264AA (IXFK)	1000 V		400 mOhm	5 V	735 W	TO-264-3 TO-264AA	N-Channel	8200 pF	10 V	-55 °C	150 °C	30 V	186 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 1100 V 30A (Tc) 960W (Tc) Through Hole TO-264AA (IXFK)

Technical documentation and resources

No documents available