MOSFET N-CH 1100V 30A TO264AA
| Part | Technology | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Supplier Device Package | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Package / Case | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | MOSFET (Metal Oxide) | 30 A | Through Hole | TO-264AA (IXFK) | 1100 V | 235 nC | 360 mOhm | 6.5 V | 960 W | TO-264-3 TO-264AA | N-Channel | 13600 pF | 10 V | -55 °C | 150 °C | 30 V | |
IXYS | MOSFET (Metal Oxide) | 30 A | Through Hole | TO-264AA (IXFK) | 1000 V | 400 mOhm | 5 V | 735 W | TO-264-3 TO-264AA | N-Channel | 8200 pF | 10 V | -55 °C | 150 °C | 30 V | 186 nC |