IDK10G65C5XTMA2
ActiveSILICON CARBIDE SCHOTTKY DIODE, THINQ GEN V SERIES, SINGLE, 650 V, 10 A, 15 NC, TO-263 (D2PAK)
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IDK10G65C5XTMA2
ActiveSILICON CARBIDE SCHOTTKY DIODE, THINQ GEN V SERIES, SINGLE, 650 V, 10 A, 15 NC, TO-263 (D2PAK)
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Technical Specifications
Parameters and characteristics for this part
| Specification | IDK10G65C5XTMA2 |
|---|---|
| Capacitance @ Vr, F | 300 pF |
| Current - Average Rectified (Io) | 10 A |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -55 C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Supplier Device Package | PG-TO263-2 |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V |
Pricing
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Description
General part information
IDK10G65 Series
The CoolSiC™ Schottky diode 650 V, 10 A generation 5 in D2PAK real2pin package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Qcx Vf).
Documents
Technical documentation and resources