SILICON CARBIDE SCHOTTKY DIODE, THINQ GEN V SERIES, SINGLE, 650 V, 10 A, 15 NC, TO-263 (D2PAK)
| Part | Voltage - DC Reverse (Vr) (Max) [Max] | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Supplier Device Package | Mounting Type | Package / Case | Technology | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Speed | Current - Average Rectified (Io) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 650 V | 300 pF | 0 ns | PG-TO263-2 | Surface Mount | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | SiC (Silicon Carbide) Schottky | 1.8 V | 175 ░C | -55 C | No Recovery Time | 10 A |