DMN3200U-7

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Diodes Inc

MOSFET, N-CH, 30V, 2.2A, SOT-23 ROHS COMPLIANT: YES

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Active

Diodes Inc

MOSFET, N-CH, 30V, 2.2A, SOT-23 ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	DMN3200U-7

Current - Continuous Drain (Id) @ 25°C	2.2 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	290 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	650 mW
Rds On (Max) @ Id, Vgs	90 mOhm
Supplier Device Package	SOT-23-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

N-Channel Enhancement Mode MOSFET

Part	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Vgs (Max)	Supplier Device Package	Power Dissipation (Max)	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds
Diodes Inc DMN3200U-7	2.2 A	30 V	1 V	90 mOhm	1.5 V 4.5 V	N-Channel	8 V	SOT-23-3	650 mW	SC-59 SOT-23-3 TO-236-3	-55 °C	150 °C	MOSFET (Metal Oxide)	Surface Mount	290 pF

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General part information

N-Channel Enhancement Mode MOSFET

Technical documentation and resources