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N-Channel Enhancement Mode MOSFET
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N-Channel Enhancement Mode MOSFET
N-Channel Enhancement Mode MOSFET
| Part | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Vgs (Max) | Supplier Device Package | Power Dissipation (Max) | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 2.2 A | 30 V | 1 V | 90 mOhm | 1.5 V 4.5 V | N-Channel | 8 V | SOT-23-3 | 650 mW | SC-59 SOT-23-3 TO-236-3 | -55 °C | 150 °C | MOSFET (Metal Oxide) | Surface Mount | 290 pF |