IPB60R099C6ATMA1

NRND

INFINEON

MOSFET TRANSISTOR, N CHANNEL, 37.9 A, 650 V, 0.09 OHM, 10 V, 3 V ROHS COMPLIANT: YES

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IPB60R099C6ATMA1

NRND

INFINEON

MOSFET TRANSISTOR, N CHANNEL, 37.9 A, 650 V, 0.09 OHM, 10 V, 3 V ROHS COMPLIANT: YES

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Description Specifications Series Pricing CAD Documents

Description

General part information

IPB60R099 Series

CoolMOS™ C6combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler.

Technical Specifications

Parameters and characteristics for this part

Specification	IPB60R099C6ATMA1

Current - Continuous Drain (Id) (Tc)	37.9 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	119 nC
Input Capacitance (Ciss) (Max)	2660 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	PG-TO263-3
Power Dissipation (Max)	278 W
Rds On (Max)	99 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3.5 V

IPB60R099 Series

Part	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Rds On (Max)	Package Name	Mounting Type	Vgs(th) (Max)	Technology	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max)	FET Type	Grade	Qualification
INFINEON IPB60R099P7ATMA1	-55 °C	150 °C	31 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	20 V	99 mOhm	PG-TO263-3	Surface Mount	4 V	MOSFET (Metal Oxide)	600 V	45 nC	117 W	1952 pF	N-Channel
INFINEON IPB60R099C6ATMA1	-55 °C	150 °C	37.9 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	20 V	99 mOhm	PG-TO263-3	Surface Mount	3.5 V	MOSFET (Metal Oxide)	600 V	119 nC	278 W	2660 pF	N-Channel
INFINEON IPB60R099C7ATMA1	-55 °C	150 °C	22 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	20 V	99 mOhm	PG-TO263-3-2	Surface Mount	4 V	MOSFET (Metal Oxide)	600 V	42 nC	110 W	1819 pF	N-Channel
INFINEON IPB60R099CPAATMA1	-40 °C	150 °C	31 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	20 V	105 mOhm	PG-TO263-3-2	Surface Mount	3.5 V	MOSFET (Metal Oxide)	600 V	80 nC 80 nC	255 W	2800 pF	N-Channel	Automotive	AEC-Q101
INFINEON IPB60R099CPATMA1	-55 °C	150 °C	31 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	20 V	99 mOhm	PG-TO263-3-2	Surface Mount	3.5 V	MOSFET (Metal Oxide)	600 V	80 nC 80 nC	255 W	2800 pF	N-Channel