Description
General part information
IPB60R099 Series
The IPB60R099CP is a 650V CoolMOS™ N-channel Power MOSFET features ultra-low gate charge. It is designed for hard switching and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. It is specially designed for hard switching topologies for server and telecom.
Technical Specifications
Parameters and characteristics for this part
| Specification | IPB60R099CPATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 31 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 80 nC, 80 nC |
| Input Capacitance (Ciss) (Max) | 2800 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Package Name | PG-TO263-3-2 |
| Power Dissipation (Max) | 255 W |
| Rds On (Max) | 99 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3.5 V |
Pricing
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CAD
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