Specification	HN2D01FTE85LF

Current - Average Rectified (Io) (per Diode)	80 mA
Current - Reverse Leakage	500 nA
Diode Configuration	Independent
Diode Count	3
Mounting Type	Surface Mount
Operating Temperature - Junction (Max)	125 °C
Package / Case	SC-74, SOT-457
Package Name	SC-74
Reverse Recovery Time (trr)	4 ns
Speed	Any Speed, Small Signal
Speed - Fast Recovery (Maximum)	200 mA
Speed - Small Signal Current Max	200 mA, 200 mA, 200 mA
Technology	Standard
Voltage - DC Reverse (Vr) (Max)	80 V
Voltage - Forward (Vf) (Max)	1.2 V

HN2D01 Series

Part	Reverse Recovery Time (trr)	Package / Case	Voltage - Forward (Vf) (Max)	Mounting Type	Technology	Current - Average Rectified (Io) (per Diode)	Current - Reverse Leakage	Operating Temperature - Junction (Max)	Package Name	Voltage - DC Reverse (Vr) (Max)	Speed - Small Signal Current Max	Speed	Speed - Fast Recovery (Maximum)	Diode Count	Diode Configuration
Toshiba Semiconductor and Storage HN2D01FU(TE85L,F)	4 ns	6-TSSOP SC-88 SOT-363	1.2 V	Surface Mount	Standard	80 mA	500 nA	125 °C	US6	80 V	200 mA 200 mA 200 mA	Any Speed Small Signal	200 mA	3	Independent
Toshiba Semiconductor and Storage HN2D01JE(TE85L,F)	1.6 ns	SOT-553	1.2 V	Surface Mount	Standard	100 mA	500 nA	150 °C	ESV	80 V	200 mA 200 mA 200 mA	Any Speed Small Signal	200 mA	2	Independent
Toshiba Semiconductor and Storage HN2D01FTE85LF	4 ns	SC-74 SOT-457	1.2 V	Surface Mount	Standard	80 mA	500 nA	125 °C	SC-74	80 V	200 mA 200 mA 200 mA	Any Speed Small Signal	200 mA	3	Independent

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