HN2D01FU(TE85L,F)

Active

Toshiba Semiconductor and Storage

DIODE ARRAY GP 80V 80MA US6

Search across all available documentation for this part.

Active

Toshiba Semiconductor and Storage

DIODE ARRAY GP 80V 80MA US6

Technical Specifications

Parameters and characteristics for this part

Specification	HN2D01FU(TE85L,F)

Current - Average Rectified (Io) (per Diode)	80 mA
Current - Reverse Leakage @ Vr	500 nA
Diode Configuration	3 Independent
Mounting Type	Surface Mount
Operating Temperature - Junction	125 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Reverse Recovery Time (trr)	4 ns
Speed	Any Speed
Speed	200 mA
Supplier Device Package	US6
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	80 V

Part	Current - Reverse Leakage @ Vr	Technology	Speed	Speed	Current - Average Rectified (Io) (per Diode)	Package / Case	Supplier Device Package	Reverse Recovery Time (trr)	Operating Temperature - Junction	Diode Configuration	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]
Toshiba Semiconductor and Storage HN2D01FU(TE85L,F)	500 nA	Standard	Any Speed	200 mA	80 mA	6-TSSOP SC-88 SOT-363	US6	4 ns	125 °C	3 Independent	Surface Mount	80 V
Toshiba Semiconductor and Storage HN2D01JE(TE85L,F)	500 nA	Standard	Any Speed	200 mA	100 mA	SOT-553	ESV	1.6 ns	150 °C	2 Independent	Surface Mount	80 V
Toshiba Semiconductor and Storage HN2D01FTE85LF	500 nA	Standard	Any Speed	200 mA	80 mA	SC-74 SOT-457	SC-74	4 ns	125 °C	3 Independent	Surface Mount	80 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.51

General part information

Diode Array 3 Independent 80 V 80mA Surface Mount 6-TSSOP, SC-88, SOT-363

Technical documentation and resources

No documents available