SSM6N813R,LXHF
ActiveToshiba Semiconductor and Storage
HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, N-CH X 2 MOSFET, 100 V, 3.5 A, 0.112 Ω@10V, TSOP6F
SSM6N813R,LXHF
ActiveToshiba Semiconductor and Storage
HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, N-CH X 2 MOSFET, 100 V, 3.5 A, 0.112 Ω@10V, TSOP6F
Description
General part information
SSM6N813R Series
HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, N-CH X 2 MOSFET, 100 V, 3.5 A, 0.112 Ω@10V, TSOP6F
Technical Specifications
Parameters and characteristics for this part
| Specification | SSM6N813R,LXHF |
|---|---|
| Channel Count | 2 |
| Configuration | N-Channel |
| Configuration - Features | Dual |
| Current - Continuous Drain (Id) (Ta) | 3.5 A |
| Drain to Source Voltage (Vdss) | 100 V |
| FET Feature | Logic Level Gate |
| FET Feature Drive Voltage | 4.5 V |
| Gate Charge (Max) | 3.6 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 242 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 175 °C |
| Package / Case | Flat Leads, 6-SMD |
| Package Name | 6-TSOP-F |
| Power - Max (Ta) | 1.5 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 112 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 2.5 V |
Pricing
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CAD
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