SSM6N813R,LF

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Toshiba Semiconductor and Storage

MOSFET 2N-CH 100V 3.5A 6TSOPF

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Toshiba Semiconductor and Storage

MOSFET 2N-CH 100V 3.5A 6TSOPF

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6N813R,LF

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	3.5 A
Drain to Source Voltage (Vdss)	100 V
Gate Charge (Qg) (Max) @ Vgs [Max]	3.6 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	242 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	6-SMD, Flat Leads
Power - Max [Max]	1.5 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	112 mOhm
Supplier Device Package	6-TSOP-F
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature	Technology	Package / Case	Grade	Qualification	Rds On (Max) @ Id, Vgs	Configuration	Power - Max [Max]
Toshiba Semiconductor and Storage SSM6N813R,LF	2.5 V	3.6 nC	6-TSOP-F	100 V	Surface Mount	3.5 A	242 pF	175 °C	MOSFET (Metal Oxide)	6-SMD Flat Leads	Automotive	AEC-Q101	112 mOhm	2 N-Channel (Dual)	1.5 W

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General part information

Mosfet Array 100V 3.5A (Ta) 1.5W (Ta) Surface Mount 6-TSOP-F

Technical documentation and resources