SIDC14D60C8X1SA2

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Infineon Technologies

600 V, 50 A, EMITTER CONTROLLED DIODE 3

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SIDC14D60C8X1SA2

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Infineon Technologies

600 V, 50 A, EMITTER CONTROLLED DIODE 3

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DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	SIDC14D60C8X1SA2

Current - Average Rectified (Io)	50 A
Current - Reverse Leakage @ Vr	27 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	Die
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	Die
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.9 V

SIDC14D60 Series

Part	Technology	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Current - Average Rectified (Io)	Package / Case	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Supplier Device Package	Speed	Speed
Infineon Technologies SIDC14D60C8X1SA2	Standard	-40 °C	175 ░C	50 A	Die	27 µA	600 V	1.9 V	Surface Mount	Die	Standard Recovery >500ns	200 mA
Infineon Technologies SIDC14D60F6X7SA1	Standard	-40 °C	175 ░C	45 A	Die	27 µA	600 V	1.6 V	Surface Mount	Die	Standard Recovery >500ns	200 mA
Infineon Technologies SIDC14D60F6X1SA3	Standard	-40 °C	175 ░C	45 A	Die	27 µA	600 V	1.6 V	Surface Mount	Die	Standard Recovery >500ns	200 mA
Infineon Technologies SIDC14D60E6X7SA1	Standard	-55 °C	150 °C	30 A	Die	27 µA	600 V	1.25 V	Surface Mount	Die	Standard Recovery >500ns	200 mA
Infineon Technologies SIDC14D60E6X1SA4	Standard	-55 °C	150 °C	30 A	Die	27 µA	600 V	1.25 V	Surface Mount	Die	Standard Recovery >500ns	200 mA
Infineon Technologies SIDC14D60F6X1SA1	Standard	-40 °C	175 ░C	45 A	Die	27 µA	600 V	1.6 V	Surface Mount	Die	Standard Recovery >500ns	200 mA
Infineon Technologies SIDC14D60C8X1SA1	Standard	-40 °C	175 ░C	50 A	Die	27 µA	600 V	1.9 V	Surface Mount	Die	Standard Recovery >500ns	200 mA
Infineon Technologies SIDC14D60F6X1SA4	Standard	-40 °C	175 ░C	45 A	Die	27 µA	600 V	1.6 V	Surface Mount	Die	Standard Recovery >500ns	200 mA
Infineon Technologies SIDC14D60E6X1SA3	Standard	-55 °C	150 °C	30 A	Die	27 µA	600 V	1.25 V	Surface Mount	Die	Standard Recovery >500ns	200 mA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

SIDC14D60 Series

Emitter Controlled Diode is Infineon's unique Fast Recovery Diode technology. The ultrathin wafer and Fieldstop technology makes the Emitter Controlled Diode ideally suited for consumer and industry applications as it lowers the turn-on losses of the IGBT with soft recovery. The Emitter Controlled Diode is optimized for Infineon IGBT technology.

Documents

Technical documentation and resources