600 V, 50 A, EMITTER CONTROLLED DIODE 3
| Part | Technology | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Current - Average Rectified (Io) | Package / Case | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) [Max] | Voltage - Forward (Vf) (Max) @ If | Mounting Type | Supplier Device Package | Speed | Speed |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | Standard | -40 °C | 175 ░C | 50 A | Die | 27 µA | 600 V | 1.9 V | Surface Mount | Die | Standard Recovery >500ns | 200 mA |
Infineon Technologies | Standard | -40 °C | 175 ░C | 45 A | Die | 27 µA | 600 V | 1.6 V | Surface Mount | Die | Standard Recovery >500ns | 200 mA |
Infineon Technologies | Standard | -40 °C | 175 ░C | 45 A | Die | 27 µA | 600 V | 1.6 V | Surface Mount | Die | Standard Recovery >500ns | 200 mA |
Infineon Technologies | Standard | -55 °C | 150 °C | 30 A | Die | 27 µA | 600 V | 1.25 V | Surface Mount | Die | Standard Recovery >500ns | 200 mA |
Infineon Technologies | Standard | -55 °C | 150 °C | 30 A | Die | 27 µA | 600 V | 1.25 V | Surface Mount | Die | Standard Recovery >500ns | 200 mA |
Infineon Technologies | Standard | -40 °C | 175 ░C | 45 A | Die | 27 µA | 600 V | 1.6 V | Surface Mount | Die | Standard Recovery >500ns | 200 mA |
Infineon Technologies | Standard | -40 °C | 175 ░C | 50 A | Die | 27 µA | 600 V | 1.9 V | Surface Mount | Die | Standard Recovery >500ns | 200 mA |
Infineon Technologies | Standard | -40 °C | 175 ░C | 45 A | Die | 27 µA | 600 V | 1.6 V | Surface Mount | Die | Standard Recovery >500ns | 200 mA |
Infineon Technologies | Standard | -55 °C | 150 °C | 30 A | Die | 27 µA | 600 V | 1.25 V | Surface Mount | Die | Standard Recovery >500ns | 200 mA |