IPW65R090CFD7XKSA1

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Infineon Technologies

COOLMOS™ CFD7 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; TO-247 PACKAGE; 90 MOHM;

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IPW65R090CFD7XKSA1

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Infineon Technologies

COOLMOS™ CFD7 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; TO-247 PACKAGE; 90 MOHM;

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DocumentsTechnical Data Sheet EN Datasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPW65R090CFD7XKSA1

Current - Continuous Drain (Id) @ 25°C	25 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	53 nC
Input Capacitance (Ciss) (Max) @ Vds	2513 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	127 W
Rds On (Max) @ Id, Vgs	90 mOhm
Supplier Device Package	PG-TO247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

IPW65R Series

Part	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Technology	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Vgs (Max)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Mounting Type	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Qualification	Grade	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
Infineon Technologies IPW65R090CFD7XKSA1	2513 pF	53 nC	25 A	PG-TO247-3	MOSFET (Metal Oxide)	10 V	4.5 V	90 mOhm	20 V	N-Channel	-55 °C	150 °C	TO-247-3	Through Hole	127 W	650 V
Infineon Technologies IPW65R190CFDAFKSA1	1850 pF		17.5 A	PG-TO247-3	MOSFET (Metal Oxide)	10 V	4.5 V	190 mOhm	20 V	N-Channel	-40 °C	150 °C	TO-247-3	Through Hole		650 V	AEC-Q101	Automotive	68 nC	151 W
Infineon Technologies IPW65R310CFDFKSA1			11.4 A	PG-TO247-3-1	MOSFET (Metal Oxide)	10 V	4.5 V	310 mOhm	20 V	N-Channel	-55 °C	150 °C	TO-247-3	Through Hole		650 V			41 nC	104.2 W
Infineon Technologies IPW65R045C7300XKSA1	4340 pF	93 nC	46 A	PG-TO247-3	MOSFET (Metal Oxide)	10 V	4 V	45 mOhm	20 V	N-Channel	-55 °C	150 °C	TO-247-3	Through Hole		650 V				227 W
Infineon Technologies IPW65R660CFDFKSA1	615 pF		6 A	PG-TO247-3-1	MOSFET (Metal Oxide)	10 V	4.5 V	660 mOhm	20 V	N-Channel	-55 °C	150 °C	TO-247-3	Through Hole		700 V			22 nC	62.5 W
Infineon Technologies IPW65R280E6FKSA1			13.8 A	PG-TO247-3-1	MOSFET (Metal Oxide)	10 V	3.5 V	280 mOhm	20 V	N-Channel	-55 °C	150 °C	TO-247-3	Through Hole	104 W	650 V			45 nC		950 pF
Infineon Technologies IPW65R280C6FKSA1			13.8 A	PG-TO247-3-1	MOSFET (Metal Oxide)	10 V	3.5 V	280 mOhm	20 V	N-Channel	-55 °C	150 °C	TO-247-3	Through Hole	104 W	650 V			45 nC		950 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 5.93
		30	$ 3.37
		120	$ 2.80
		510	$ 2.40
Newark	Each	1	$ 7.30
		10	$ 6.79
		25	$ 4.98
		50	$ 4.75
		100	$ 4.53
		480	$ 4.52
		720	$ 4.04

Description

General part information

IPW65R Series

Infineon’s650V CoolMOS™ CFD7 superjunction MOSFETIPW65R090CFD7 in TO-247 package is ideally suited for resonant topologies in industrial applications, such asserver,telecom,solar, andEV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to theCFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage.

Documents

Technical documentation and resources

Technical Data Sheet EN

Datasheet