IPW65R Series

Catalog

COOLMOS™ CFD7 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; TO-247 PACKAGE; 90 MOHM;

Part	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Technology	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Vgs (Max)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Mounting Type	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Qualification	Grade	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
Infineon Technologies IPW65R090CFD7XKSA1	2513 pF	53 nC	25 A	PG-TO247-3	MOSFET (Metal Oxide)	10 V	4.5 V	90 mOhm	20 V	N-Channel	-55 °C	150 °C	TO-247-3	Through Hole	127 W	650 V
Infineon Technologies IPW65R190CFDAFKSA1	1850 pF		17.5 A	PG-TO247-3	MOSFET (Metal Oxide)	10 V	4.5 V	190 mOhm	20 V	N-Channel	-40 °C	150 °C	TO-247-3	Through Hole		650 V	AEC-Q101	Automotive	68 nC	151 W
Infineon Technologies IPW65R310CFDFKSA1			11.4 A	PG-TO247-3-1	MOSFET (Metal Oxide)	10 V	4.5 V	310 mOhm	20 V	N-Channel	-55 °C	150 °C	TO-247-3	Through Hole		650 V			41 nC	104.2 W
Infineon Technologies IPW65R045C7300XKSA1	4340 pF	93 nC	46 A	PG-TO247-3	MOSFET (Metal Oxide)	10 V	4 V	45 mOhm	20 V	N-Channel	-55 °C	150 °C	TO-247-3	Through Hole		650 V				227 W
Infineon Technologies IPW65R660CFDFKSA1	615 pF		6 A	PG-TO247-3-1	MOSFET (Metal Oxide)	10 V	4.5 V	660 mOhm	20 V	N-Channel	-55 °C	150 °C	TO-247-3	Through Hole		700 V			22 nC	62.5 W
Infineon Technologies IPW65R280E6FKSA1			13.8 A	PG-TO247-3-1	MOSFET (Metal Oxide)	10 V	3.5 V	280 mOhm	20 V	N-Channel	-55 °C	150 °C	TO-247-3	Through Hole	104 W	650 V			45 nC		950 pF
Infineon Technologies IPW65R280C6FKSA1			13.8 A	PG-TO247-3-1	MOSFET (Metal Oxide)	10 V	3.5 V	280 mOhm	20 V	N-Channel	-55 °C	150 °C	TO-247-3	Through Hole	104 W	650 V			45 nC		950 pF