
SPD09P06PLGBTMA1
ActiveInfineon Technologies
POWER MOSFET, P CHANNEL, 60 V, 9.7 A, 0.2 OHM, TO-252 (DPAK), SURFACE MOUNT
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SPD09P06PLGBTMA1
ActiveInfineon Technologies
POWER MOSFET, P CHANNEL, 60 V, 9.7 A, 0.2 OHM, TO-252 (DPAK), SURFACE MOUNT
Deep-Dive with AI
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Technical Specifications
Parameters and characteristics for this part
| Specification | SPD09P06PLGBTMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 9.7 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 21 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 450 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Power Dissipation (Max) | 42 W |
| Rds On (Max) @ Id, Vgs | 250 mOhm |
| Supplier Device Package | PG-TO252-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.89 | |
| 10 | $ 0.73 | |||
| 100 | $ 0.57 | |||
| 500 | $ 0.48 | |||
| 1000 | $ 0.39 | |||
| Digi-Reel® | 1 | $ 0.89 | ||
| 10 | $ 0.73 | |||
| 100 | $ 0.57 | |||
| 500 | $ 0.48 | |||
| 1000 | $ 0.39 | |||
| Tape & Reel (TR) | 2500 | $ 0.37 | ||
| 5000 | $ 0.35 | |||
| 12500 | $ 0.34 | |||
| 25000 | $ 0.33 | |||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 1.02 | |
| 1 | $ 1.02 | |||
| 10 | $ 0.79 | |||
| 10 | $ 0.79 | |||
| 25 | $ 0.70 | |||
| 25 | $ 0.70 | |||
| 50 | $ 0.62 | |||
| 50 | $ 0.62 | |||
| 100 | $ 0.54 | |||
| 100 | $ 0.54 | |||
| 250 | $ 0.49 | |||
| 250 | $ 0.49 | |||
| 500 | $ 0.45 | |||
| 500 | $ 0.45 | |||
| 1000 | $ 0.38 | |||
| 1000 | $ 0.38 | |||
Description
General part information
SPD09P06 Series
Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.
Documents
Technical documentation and resources