Zenode.ai Logo
Beta
K
SPD09P06PLGBTMA1 - TO252-3

SPD09P06PLGBTMA1

Active
Infineon Technologies

POWER MOSFET, P CHANNEL, 60 V, 9.7 A, 0.2 OHM, TO-252 (DPAK), SURFACE MOUNT

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet
SPD09P06PLGBTMA1 - TO252-3

SPD09P06PLGBTMA1

Active
Infineon Technologies

POWER MOSFET, P CHANNEL, 60 V, 9.7 A, 0.2 OHM, TO-252 (DPAK), SURFACE MOUNT

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSPD09P06PLGBTMA1
Current - Continuous Drain (Id) @ 25°C9.7 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]21 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]450 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)42 W
Rds On (Max) @ Id, Vgs250 mOhm
Supplier Device PackagePG-TO252-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.89
10$ 0.73
100$ 0.57
500$ 0.48
1000$ 0.39
Digi-Reel® 1$ 0.89
10$ 0.73
100$ 0.57
500$ 0.48
1000$ 0.39
Tape & Reel (TR) 2500$ 0.37
5000$ 0.35
12500$ 0.34
25000$ 0.33
NewarkEach (Supplied on Cut Tape) 1$ 1.02
1$ 1.02
10$ 0.79
10$ 0.79
25$ 0.70
25$ 0.70
50$ 0.62
50$ 0.62
100$ 0.54
100$ 0.54
250$ 0.49
250$ 0.49
500$ 0.45
500$ 0.45
1000$ 0.38
1000$ 0.38

Description

General part information

SPD09P06 Series

Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.

Documents

Technical documentation and resources