Beta
⌘K
POWER MOSFET, P CHANNEL, 60 V, 9.7 A, 0.2 OHM, TO-252 (DPAK), SURFACE MOUNT
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs (Max) | Vgs(th) (Max) @ Id | FET Type | Drain to Source Voltage (Vdss) | Technology | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Mounting Type | Rds On (Max) @ Id, Vgs | Supplier Device Package | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 21 nC | 20 V | 2 V | P-Channel | 60 V | MOSFET (Metal Oxide) | 42 W | 450 pF | Surface Mount | 250 mOhm | PG-TO252-3 | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 4.5 V 10 V | -55 °C | 175 ░C | 9.7 A |