IPP04CN10NGXKSA1

Obsolete

Infineon Technologies

OPTIMOS™ N-CHANNEL POWER MOSFET 100 V ; TO-220 PACKAGE; 3.9 MOHM;

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IPP04CN10NGXKSA1

Obsolete

Infineon Technologies

OPTIMOS™ N-CHANNEL POWER MOSFET 100 V ; TO-220 PACKAGE; 3.9 MOHM;

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPP04CN10NGXKSA1

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	210 nC
Input Capacitance (Ciss) (Max) @ Vds	13800 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	300 W
Rds On (Max) @ Id, Vgs	4.2 mOhm
Supplier Device Package	PG-TO220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IPP04CN10 Series

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	FET Type	Power Dissipation (Max) [Max]	Package / Case	Vgs (Max)
Infineon Technologies IPP04CN10NGXKSA1	210 nC	4 V	-55 °C	175 ░C	13800 pF	MOSFET (Metal Oxide)	Through Hole	100 A	4.2 mOhm	PG-TO220-3	10 V	100 V	N-Channel	300 W	TO-220-3	20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

IPP04CN10 Series

Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS(on)and FOM (figure of merit).

Documents

Technical documentation and resources