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OPTIMOS™ N-CHANNEL POWER MOSFET 100 V ; TO-220 PACKAGE; 3.9 MOHM;
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Technology | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | FET Type | Power Dissipation (Max) [Max] | Package / Case | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 210 nC | 4 V | -55 °C | 175 ░C | 13800 pF | MOSFET (Metal Oxide) | Through Hole | 100 A | 4.2 mOhm | PG-TO220-3 | 10 V | 100 V | N-Channel | 300 W | TO-220-3 | 20 V |