IXTH20N65X

Obsolete

IXYS

MOSFET N-CH 650V 20A TO247

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Obsolete

IXYS

MOSFET N-CH 650V 20A TO247

Technical Specifications

Parameters and characteristics for this part

Specification	IXTH20N65X

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	35 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1390 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	320 W
Supplier Device Package	TO-247 (IXTH)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5.5 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Rds On (Max) @ Id, Vgs [Max]
IXYS IXTH20N65X	35 nC	TO-247-3	20 A	320 W	1390 pF	5.5 V	-55 °C	150 °C	N-Channel	TO-247 (IXTH)	650 V	Through Hole	10 V	MOSFET (Metal Oxide)	30 V
IXYS IXTH20N60		TO-247-3	20 A	300 W		4.5 V	-55 °C	150 °C	N-Channel	TO-247 (IXTH)	600 V	Through Hole	10 V	MOSFET (Metal Oxide)	20 V	4500 pF	170 nC	350 mOhm
IXYS IXTH20N50D		TO-247-3	20 A	400 W			-55 °C	150 °C	N-Channel Depletion Mode	TO-247 (IXTH)	500 V	Through Hole	10 V	MOSFET (Metal Oxide)	30 V	2500 pF	125 nC		330 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 650 V 20A (Tc) 320W (Tc) Through Hole TO-247 (IXTH)

Technical documentation and resources