IXTH20 Series

Manufacturer: IXYS

Catalog

MOSFET N-CH 650V 20A TO247

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Rds On (Max) @ Id, Vgs [Max]
IXYS IXTH20N65X	35 nC	TO-247-3	20 A	320 W	1390 pF	5.5 V	-55 °C	150 °C	N-Channel	TO-247 (IXTH)	650 V	Through Hole	10 V	MOSFET (Metal Oxide)	30 V
IXYS IXTH20N60		TO-247-3	20 A	300 W		4.5 V	-55 °C	150 °C	N-Channel	TO-247 (IXTH)	600 V	Through Hole	10 V	MOSFET (Metal Oxide)	20 V	4500 pF	170 nC	350 mOhm
IXYS IXTH20N50D		TO-247-3	20 A	400 W			-55 °C	150 °C	N-Channel Depletion Mode	TO-247 (IXTH)	500 V	Through Hole	10 V	MOSFET (Metal Oxide)	30 V	2500 pF	125 nC		330 mOhm