BSC027N10NS5ATMA1
ActiveOPTIMOS™ 5 N-CHANNEL POWER MOSFET 100 V ; SUPERSO8 5X6 PACKAGE; 2.7 MOHM;
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BSC027N10NS5ATMA1
ActiveOPTIMOS™ 5 N-CHANNEL POWER MOSFET 100 V ; SUPERSO8 5X6 PACKAGE; 2.7 MOHM;
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Technical Specifications
Parameters and characteristics for this part
| Specification | BSC027N10NS5ATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 23 A, 100 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6 V, 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 111 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 8200 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 3 W, 214 W |
| Rds On (Max) @ Id, Vgs | 2.7 mOhm |
| Supplier Device Package | PG-TSON-8-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
BSC027 Series
Infineon'sOptiMOS™ MOSFETs in SuperSO8package extend OptiMOS™ 3 and 5 product portfolio and enable higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance. Low reverse recovery charge (Qrr) improves the system reliability by providing a significant reduction of voltage overshoot, which minimizes the need for snubber circuits, resulting in less engineering cost and effort.
Documents
Technical documentation and resources