Beta
⌘K
POWER MOSFET, N CHANNEL, 40 V, 100 A, 0.0023 OHM, PG-TDSON, SURFACE MOUNT
| Part | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Mounting Type | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Technology | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 85 nC | 4.5 V 10 V | 20 V | 24 A 100 A | 6800 pF | 40 V | -55 °C | 150 °C | 8-PowerTDFN | Surface Mount | N-Channel | 2.7 mOhm | 2 V | 2.5 W 83 W | MOSFET (Metal Oxide) | PG-TDSON-8-1 | |
Infineon Technologies | 6 V 10 V | 20 V | 23 A 100 A | 8200 pF | 100 V | -55 °C | 175 ░C | 8-PowerTDFN | Surface Mount | N-Channel | 2.7 mOhm | 3.8 V | 3 W 214 W | MOSFET (Metal Oxide) | PG-TSON-8-3 | 111 nC |