IRFB3004PBF
ObsoleteIR MOSFET™ N-CHANNEL POWER MOSFET ; TO-220 PACKAGE; 1.75 MOHM;
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IRFB3004PBF
ObsoleteIR MOSFET™ N-CHANNEL POWER MOSFET ; TO-220 PACKAGE; 1.75 MOHM;
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IRFB3004PBF |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 195 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 240 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 9200 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 380 W |
| Rds On (Max) @ Id, Vgs | 1.75 mOhm |
| Supplier Device Package | TO-220AB |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
IRFB3004 Series
The IR MOSFET™ family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design. The optimized gate drive options enables designers the flexibility of selecting super, logic or normal level drives.
Documents
Technical documentation and resources