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IR MOSFET™ N-CHANNEL POWER MOSFET ; TO-220 PACKAGE; 1.75 MOHM;
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) | Technology | Rds On (Max) @ Id, Vgs | FET Type | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Package / Case | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | -55 °C | 175 ░C | 20 V | 10 V | TO-220AB | 40 V | 240 nC | 380 W | MOSFET (Metal Oxide) | 1.75 mOhm | N-Channel | 195 A | 9200 pF | 4 V | TO-220-3 | Through Hole |