BSZ010NE2LS5ATMA1

Infineon Technologies

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 25 V ; PQFN 3.3 X 3.3 FUSED LEAD PACKAGE; 1 MOHM; ORING/EFUSE

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BSZ010NE2LS5ATMA1

Infineon Technologies

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 25 V ; PQFN 3.3 X 3.3 FUSED LEAD PACKAGE; 1 MOHM; ORING/EFUSE

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Technical Specifications

Parameters and characteristics for this part

Specification	BSZ010NE2LS5ATMA1

Current - Continuous Drain (Id) @ 25°C	32 A, 40 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	29 nC
Input Capacitance (Ciss) (Max) @ Vds	3900 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	69 W, 2.1 W
Rds On (Max) @ Id, Vgs	1 mOhm
Supplier Device Package	PG-TSDSON-8-34
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	2 V

BSZ010 Series

Part	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Technology	Vgs (Max)	Rds On (Max) @ Id, Vgs
Infineon Technologies BSZ010NE2LS5ATMA1	PG-TSDSON-8-34	-55 °C	150 °C	2 V	2.1 W 69 W	8-PowerVDFN	4.5 V 10 V	29 nC	3900 pF	N-Channel	25 V	32 A 40 A	Surface Mount	MOSFET (Metal Oxide)	16 V	1 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.79
		10	$ 1.55
		25	$ 1.46
		100	$ 1.34
		250	$ 1.27
		500	$ 1.22
		1000	$ 1.17
	Digi-Reel®	1	$ 1.79
		10	$ 1.55
		25	$ 1.46
		100	$ 1.34
		250	$ 1.27
		500	$ 1.22
		1000	$ 1.17
	Tape & Reel (TR)	5000	$ 1.07
Newark	Each (Supplied on Full Reel)	5000	$ 1.11
		10000	$ 0.97

Description

General part information

BSZ010 Series

Infineon’s OptiMOS™ 5 25V power MOSFET BSZ010NE2LS5 is the best choice for optimized efficiency and power density solutions such as synchronous rectification in switched mode power supplies (SMPS). A significantly reduced RDS(on)compared to the previous OptiMOS™ MOSFET products enables an increase of the system efficiency. The small footprint of the PQFN 3.3x3.3 mm package combined with outstanding electrical performance further enhances best-in-class power density and form factor improvement in the target applications.

Documents

Technical documentation and resources