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OPTIMOS™ 5 N-CHANNEL POWER MOSFET 25 V ; PQFN 3.3 X 3.3 FUSED LEAD PACKAGE; 1 MOHM; ORING/EFUSE
| Part | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Technology | Vgs (Max) | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | PG-TSDSON-8-34 | -55 °C | 150 °C | 2 V | 2.1 W 69 W | 8-PowerVDFN | 4.5 V 10 V | 29 nC | 3900 pF | N-Channel | 25 V | 32 A 40 A | Surface Mount | MOSFET (Metal Oxide) | 16 V | 1 mOhm |