SSM6L40TU,LF

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Toshiba Semiconductor and Storage

MOSFET N/P-CH 30V 1.6A UF6

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Toshiba Semiconductor and Storage

MOSFET N/P-CH 30V 1.6A UF6

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6L40TU,LF

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	1.4 A, 1.6 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	4V Drive, Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	5.1 nC
Gate Charge (Qg) (Max) @ Vgs	2.9 nC
Input Capacitance (Ciss) (Max) @ Vds	180 pF, 120 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-SMD, Flat Leads
Power - Max [Max]	500 mW
Rds On (Max) @ Id, Vgs	122 mOhm, 226 mOhm
Supplier Device Package	UF6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.6 V, 2 V

Part	Rds On (Max) @ Id, Vgs	Package / Case	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Power - Max [Max]	FET Feature	Supplier Device Package	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Configuration	Technology
Toshiba Semiconductor and Storage SSM6L40TU,LF	122 mOhm 226 mOhm	6-SMD Flat Leads	30 V	120 pF 180 pF	150 °C	1.4 A 1.6 A	500 mW	4V Drive Logic Level Gate	UF6	2 V 2.6 V	5.1 nC	2.9 nC	Surface Mount	N and P-Channel	MOSFET (Metal Oxide)

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General part information

Mosfet Array 30V 1.6A (Ta), 1.4A (Ta) 500mW (Ta) Surface Mount UF6

Technical documentation and resources