Specification	SSM6L40TU,LF

Configuration	N, P-Channel
Current - Continuous Drain (Id) (Ta)	1.6 A
Current - Continuous Drain (Id) (Ta) (2)	1.4 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
FET Feature Drive Voltage	4 V
Gate Charge (Max)	5.1 nC
Input Capacitance (Ciss) (Max)	120 pF, 180 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	Flat Leads, 6-SMD
Package Name	UF6
Power - Max (Ta)	500 mW
Rds On (Max)	122 mOhm, 226 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2 V, 2.6 V

SSM6L40TU Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch + P-ch MOSFET, 30 V/-30 V, 1.6 A/-1.4 A, 0.122 Ω@10V/0.226 Ω@10V, SOT-363F(UF6)

Part	Package / Case	FET Feature	FET Feature Drive Voltage	Vgs(th) (Max)	Technology	Operating Temperature	Gate Charge (Max)	Current - Continuous Drain (Id) (Ta)	Current - Continuous Drain (Id) (Ta) (2)	Mounting Type	Input Capacitance (Ciss) (Max)	Package Name	Drain to Source Voltage (Vdss)	Rds On (Max)	Configuration	Power - Max (Ta)
Toshiba Semiconductor and Storage SSM6L40TU,LF	6-SMD Flat Leads	Logic Level Gate	4 V	2 V 2.6 V	MOSFET (Metal Oxide)	150 °C	5.1 nC	1.6 A	1.4 A	Surface Mount	120 pF 180 pF	UF6	30 V	122 mOhm 226 mOhm	N P-Channel	500 mW

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