MOSFET N/P-CH 30V 1.6A UF6
| Part | Rds On (Max) @ Id, Vgs | Package / Case | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature | Current - Continuous Drain (Id) @ 25°C | Power - Max [Max] | FET Feature | Supplier Device Package | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Configuration | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 122 mOhm 226 mOhm | 6-SMD Flat Leads | 30 V | 120 pF 180 pF | 150 °C | 1.4 A 1.6 A | 500 mW | 4V Drive Logic Level Gate | UF6 | 2 V 2.6 V | 5.1 nC | 2.9 nC | Surface Mount | N and P-Channel | MOSFET (Metal Oxide) |