Technical Specifications
Parameters and characteristics for this part
| Specification | STH3N150-2 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2.5 A |
| Drain to Source Voltage (Vdss) | 1500 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 29.3 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 939 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | D2PAK (2 Leads + Tab), Variant, TO-263-3 |
| Power Dissipation (Max) | 140 W |
| Rds On (Max) @ Id, Vgs | 9 Ohm |
| Supplier Device Package | H2PAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 6.30 | |
| 10 | $ 4.23 | |||
| 100 | $ 3.06 | |||
| 500 | $ 2.56 | |||
| Digi-Reel® | 1 | $ 6.30 | ||
| 10 | $ 4.23 | |||
| 100 | $ 3.06 | |||
| 500 | $ 2.56 | |||
| Tape & Reel (TR) | 1000 | $ 2.48 | ||
Description
General part information
STH3N150-2 Series
These Power MOSFETs are designed using the STMicroelectronics consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.
Documents
Technical documentation and resources
Datasheet
DatasheetDatasheet
DatasheetAN2344
Application NotesTN1378
Technical Notes & ArticlesFlyers
DS5052
Product SpecificationsFlyers
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