STH3N150-2 Series

N-channel 1500 V, 6 Ohm typ., 2.5 A PowerMESH power MOSFET in H2PAK-2 package

Catalog

N-channel 1500 V, 6 Ohm typ., 2.5 A PowerMESH power MOSFET in H2PAK-2 package

Part	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Mounting Type	Technology	Operating Temperature	Vgs (Max)	Supplier Device Package	Package / Case	Drive Voltage (Max Rds On, Min Rds On)
STMicroelectronics STH3N150-2	140 W	939 pF	2.5 A	9 Ohm	29.3 nC	N-Channel	1500 V	5 V	Surface Mount	MOSFET (Metal Oxide)	150 °C	30 V	H2PAK	D2PAK (2 Leads + Tab) TO-263-3 Variant	10 V

Catalog

N-channel 1500 V, 6 Ohm typ., 2.5 A PowerMESH power MOSFET in H2PAK-2 package

Description

These Power MOSFETs are designed using the STMicroelectronics consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.