BSC011N03LSATMA1

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Infineon Technologies

POWER MOSFET, N CHANNEL, 30 V, 230 A, 900 ΜOHM, TDSON, SURFACE MOUNT

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Infineon Technologies

POWER MOSFET, N CHANNEL, 30 V, 230 A, 900 ΜOHM, TDSON, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

Specification	BSC011N03LSATMA1

Current - Continuous Drain (Id) @ 25°C	37 A, 100 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	72 nC
Input Capacitance (Ciss) (Max) @ Vds	4700 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	2.5 W, 96 W
Rds On (Max) @ Id, Vgs	1.1 mOhm
Supplier Device Package	PG-TDSON-8-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.2 V

Part	Drain to Source Voltage (Vdss)	Supplier Device Package	Power Dissipation (Max)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id [Max]	Mounting Type	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id
Infineon Technologies BSC011N03LSATMA1	30 V	PG-TDSON-8-1	2.5 W 96 W	MOSFET (Metal Oxide)	4.5 V 10 V	20 V	37 A 100 A	2.2 V	Surface Mount	1.1 mOhm	72 nC	N-Channel	-55 °C	175 ░C	8-PowerTDFN	4700 pF
Infineon Technologies BSC011N03LSTATMA1	30 V	PG-TDSON-8 FL	3 W 115 W	MOSFET (Metal Oxide)	4.5 V 10 V	20 V	39 A 100 A		Surface Mount	1.1 mOhm		N-Channel	-55 °C	175 ░C	8-PowerTDFN	6300 pF	48 nC	2 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 37A (Ta), 100A (Tc) 2.5W (Ta), 96W (Tc) Surface Mount PG-TDSON-8-1

Technical documentation and resources