Beta
⌘K
POWER MOSFET, N CHANNEL, 30 V, 230 A, 900 ΜOHM, TDSON, SURFACE MOUNT
| Part | Drain to Source Voltage (Vdss) | Supplier Device Package | Power Dissipation (Max) | Technology | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id [Max] | Mounting Type | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 30 V | PG-TDSON-8-1 | 2.5 W 96 W | MOSFET (Metal Oxide) | 4.5 V 10 V | 20 V | 37 A 100 A | 2.2 V | Surface Mount | 1.1 mOhm | 72 nC | N-Channel | -55 °C | 175 ░C | 8-PowerTDFN | 4700 pF | ||
Infineon Technologies | 30 V | PG-TDSON-8 FL | 3 W 115 W | MOSFET (Metal Oxide) | 4.5 V 10 V | 20 V | 39 A 100 A | Surface Mount | 1.1 mOhm | N-Channel | -55 °C | 175 ░C | 8-PowerTDFN | 6300 pF | 48 nC | 2 V |