SSM6N67NU,LF

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Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 4A 6DFN

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Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 4A 6DFN

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6N67NU,LF

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	1.8 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	3.2 nC
Input Capacitance (Ciss) (Max) @ Vds	310 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs [Max]	39.1 mOhm
Supplier Device Package	6-µDFN (2x2)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Vgs(th) (Max) @ Id	FET Feature	FET Feature	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs	Configuration	Technology	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Power - Max [Max]	Rds On (Max) @ Id, Vgs [Max]	Mounting Type
Toshiba Semiconductor and Storage SSM6N67NU,LF	1 V	1.8 V	Logic Level Gate	4 A	30 V	150 °C	3.2 nC	2 N-Channel (Dual)	MOSFET (Metal Oxide)	310 pF	6-µDFN (2x2)	2 W	39.1 mOhm	Surface Mount

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General part information

Mosfet Array 30V 4A (Ta) 2W (Ta) Surface Mount 6-µDFN (2x2)

Technical documentation and resources

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