SSM6N67 Series

Catalog

MOSFET 2N-CH 30V 4A 6DFN

Part	Vgs(th) (Max) @ Id	FET Feature	FET Feature	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs	Configuration	Technology	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Power - Max [Max]	Rds On (Max) @ Id, Vgs [Max]	Mounting Type
Toshiba Semiconductor and Storage SSM6N67NU,LF	1 V	1.8 V	Logic Level Gate	4 A	30 V	150 °C	3.2 nC	2 N-Channel (Dual)	MOSFET (Metal Oxide)	310 pF	6-µDFN (2x2)	2 W	39.1 mOhm	Surface Mount