IPA65R190CFDXKSA1

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INFINEON

POWER MOSFET, N CHANNEL, 700 V, 17.5 A, 0.171 OHM, TO-220, THROUGH HOLE

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IPA65R190CFDXKSA1

Unknown

INFINEON

POWER MOSFET, N CHANNEL, 700 V, 17.5 A, 0.171 OHM, TO-220, THROUGH HOLE

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Description Specifications Series Pricing CAD Documents

Description

General part information

IPA65R Series

650V CoolMOS™ CFD2 power transistor is second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 device is the successor of 600V CFD with improved energy efficiency. The softer commutation behaviour and therefore better EMI behaviour gives this product a clear advantage in comparison with competitor parts. Potential applications include telecom, server, solar, HID lamp ballast, LED lighting and eMobility.

Technical Specifications

Parameters and characteristics for this part

Specification	IPA65R190CFDXKSA1

Current - Continuous Drain (Id) (Tc)	17.5 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	68 nC
Input Capacitance (Ciss) (Max)	1850 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3 Full Pack
Package Name	PG-TO220-3-111
Power Dissipation (Max)	34 W
Rds On (Max)	190 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4.5 V

IPA65R Series

Part	Technology	Package Name	Rds On (Max)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Gate Charge (Max)	Vgs(th) (Max)	Vgs (Max)	Package / Case	Power Dissipation (Max)	Current - Continuous Drain (Id) (Tc)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)	Operating Temperature (Min)	Operating Temperature (Max)
INFINEON IPA65R190CFDXKSA2	MOSFET (Metal Oxide)	PG-TO220-FP	190 mOhm	Through Hole	10 V	N-Channel	68 nC	4.5 V	20 V	TO-220-3 Full Pack	34 W	17.5 A	650 V	1850 pF	-55 °C	150 °C
INFINEON IPA65R110CFDXKSA2	MOSFET (Metal Oxide)	PG-TO220-FP	110 mOhm	Through Hole	10 V	N-Channel	118 nC	4.5 V	20 V	TO-220-3 Full Pack	34.7 W	31.2 A	650 V	3240 pF 3240 pF	-55 °C	150 °C
INFINEON IPA65R190CFDXKSA1	MOSFET (Metal Oxide)	PG-TO220-3-111	190 mOhm	Through Hole	10 V	N-Channel	68 nC	4.5 V	20 V	TO-220-3 Full Pack	34 W	17.5 A	650 V	1850 pF	-55 °C	150 °C
INFINEON IPA65R600C6XKSA1	MOSFET (Metal Oxide)	PG-TO220-3-111	600 mOhm	Through Hole	10 V	N-Channel	23 nC	3.5 V	20 V	TO-220-3 Full Pack	28 W	7.3 A	650 V	440 pF	-55 °C	150 °C
INFINEON IPA65R190E6XKSA1	MOSFET (Metal Oxide)	PG-TO220-3-111	190 mOhm	Through Hole	10 V	N-Channel	73 nC	3.5 V	20 V	TO-220-3 Full Pack	34 W	20.2 A 20.2 A	650 V	1620 pF	-55 °C	150 °C
INFINEON IPA65R125C7XKSA1	MOSFET (Metal Oxide)	PG-TO220-FP	125 mOhm	Through Hole	10 V	N-Channel	35 nC	4 V	20 V	TO-220-3 Full Pack	32 W	10 A	650 V	1670 pF	-55 °C	150 °C
INFINEON IPA65R110CFDXKSA1	MOSFET (Metal Oxide)	PG-TO220-3-111	110 mOhm	Through Hole	10 V	N-Channel	118 nC	4.5 V	20 V	TO-220-3 Full Pack	34.7 W	31.2 A	650 V	3240 pF 3240 pF	-55 °C	150 °C