IPA65R190E6XKSA1

NRND

INFINEON

POWER MOSFET, N CHANNEL, 650 V, 20.2 A, 0.17 OHM, TO-220FP, THROUGH HOLE

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IPA65R190E6XKSA1

NRND

INFINEON

POWER MOSFET, N CHANNEL, 650 V, 20.2 A, 0.17 OHM, TO-220FP, THROUGH HOLE

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Description Specifications Series Pricing CAD Documents

Description

General part information

IPA65R Series

CoolMOS™ E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler.

Technical Specifications

Parameters and characteristics for this part

Specification	IPA65R190E6XKSA1

Current - Continuous Drain (Id) (Tc)	20.2 A, 20.2 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	73 nC
Input Capacitance (Ciss) (Max)	1620 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3 Full Pack
Package Name	PG-TO220-3-111
Power Dissipation (Max)	34 W
Rds On (Max)	190 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3.5 V

IPA65R Series

Part	Technology	Package Name	Rds On (Max)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Gate Charge (Max)	Vgs(th) (Max)	Vgs (Max)	Package / Case	Power Dissipation (Max)	Current - Continuous Drain (Id) (Tc)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)	Operating Temperature (Min)	Operating Temperature (Max)
INFINEON IPA65R190CFDXKSA2	MOSFET (Metal Oxide)	PG-TO220-FP	190 mOhm	Through Hole	10 V	N-Channel	68 nC	4.5 V	20 V	TO-220-3 Full Pack	34 W	17.5 A	650 V	1850 pF	-55 °C	150 °C
INFINEON IPA65R110CFDXKSA2	MOSFET (Metal Oxide)	PG-TO220-FP	110 mOhm	Through Hole	10 V	N-Channel	118 nC	4.5 V	20 V	TO-220-3 Full Pack	34.7 W	31.2 A	650 V	3240 pF 3240 pF	-55 °C	150 °C
INFINEON IPA65R190CFDXKSA1	MOSFET (Metal Oxide)	PG-TO220-3-111	190 mOhm	Through Hole	10 V	N-Channel	68 nC	4.5 V	20 V	TO-220-3 Full Pack	34 W	17.5 A	650 V	1850 pF	-55 °C	150 °C
INFINEON IPA65R600C6XKSA1	MOSFET (Metal Oxide)	PG-TO220-3-111	600 mOhm	Through Hole	10 V	N-Channel	23 nC	3.5 V	20 V	TO-220-3 Full Pack	28 W	7.3 A	650 V	440 pF	-55 °C	150 °C
INFINEON IPA65R190E6XKSA1	MOSFET (Metal Oxide)	PG-TO220-3-111	190 mOhm	Through Hole	10 V	N-Channel	73 nC	3.5 V	20 V	TO-220-3 Full Pack	34 W	20.2 A 20.2 A	650 V	1620 pF	-55 °C	150 °C
INFINEON IPA65R125C7XKSA1	MOSFET (Metal Oxide)	PG-TO220-FP	125 mOhm	Through Hole	10 V	N-Channel	35 nC	4 V	20 V	TO-220-3 Full Pack	32 W	10 A	650 V	1670 pF	-55 °C	150 °C
INFINEON IPA65R110CFDXKSA1	MOSFET (Metal Oxide)	PG-TO220-3-111	110 mOhm	Through Hole	10 V	N-Channel	118 nC	4.5 V	20 V	TO-220-3 Full Pack	34.7 W	31.2 A	650 V	3240 pF 3240 pF	-55 °C	150 °C