Specification	TLP293-4(LA-TP,E

Current - DC Forward (If) (Max)	50 mA
Current - Output / Channel	50 mA
Current Transfer Ratio (Max)	600 %
Current Transfer Ratio (Min)	50 %
Fall Time (Typ)	3 µs
Input Type	DC
Mounting Type	Surface Mount
Number of Channels	4
Operating Temperature (Max)	125 °C
Operating Temperature (Min)	-55 °C
Output Type	Transistor
Package Length	0.179 in
Package Name	16-SO, 16-SOIC
Package Width	4.55 mm
Rise Time (Typ)	2 µs
Turn Off Time (Typ)	3 µs
Turn On Time (Typ)	3 µs
Vce Saturation (Max)	300 mV
Voltage - Forward (Vf) (Typ)	1.25 V
Voltage - Isolation	3750 VDC
Voltage - Output (Max)	80 V

TLP293-4 Series

Isolators and Solid State Relays for Enhanced Safety and Efficiency | Toshiba, Photocoupler (phototransistor output), DC input, 3750 Vrms, SO16

Part	Current - DC Forward (If) (Max)	Output Type	Voltage - Forward (Vf) (Typ)	Vce Saturation (Max)	Current Transfer Ratio (Max)	Input Type	Voltage - Output (Max)	Voltage - Isolation	Mounting Type	Number of Channels	Current Transfer Ratio (Min)	Package Length	Package Name	Package Width	Turn On Time (Typ)	Turn Off Time (Typ)	Current - Output / Channel	Rise Time (Typ)	Fall Time (Typ)	Operating Temperature (Max)	Operating Temperature (Min)
Toshiba Semiconductor and Storage TLP293-4(V4-TP,E	50 mA	Transistor	1.25 V	300 mV	600 %	DC	80 V	3750 VDC	Surface Mount	4	50 %	0.179 in	16-SO 16-SOIC	4.55 mm	3 µs	3 µs	50 mA	2 µs	3 µs	125 °C	-55 °C
Toshiba Semiconductor and Storage TLP293-4(V4GBTPE	50 mA	Transistor	1.25 V	300 mV	600 %	DC	80 V	3750 VDC	Surface Mount	4	100 %	0.179 in	16-SO 16-SOIC	4.55 mm	3 µs	3 µs	50 mA	2 µs	3 µs	125 °C	-55 °C
Toshiba Semiconductor and Storage TLP293-4(GBTPR,E	50 mA	Transistor	1.25 V	300 mV	600 %	DC	80 V	3750 VDC	Surface Mount	4	100 %	0.179 in	16-SO 16-SOIC	4.55 mm	3 µs	3 µs	50 mA	2 µs	3 µs	125 °C	-55 °C
Toshiba Semiconductor and Storage TLP293-4(TP,E	50 mA	Transistor	1.25 V	300 mV	600 %	DC	80 V	3750 VDC	Surface Mount	4	50 %	0.179 in	16-SO 16-SOIC	4.55 mm	3 µs	3 µs	50 mA	2 µs	3 µs	125 °C	-55 °C
Toshiba Semiconductor and Storage TLP293-4(LGBTP,E	50 mA	Transistor	1.25 V	300 mV	600 %	DC	80 V	3750 VDC	Surface Mount	4	100 %	0.179 in	16-SO 16-SOIC	4.55 mm	3 µs	3 µs	50 mA	2 µs	3 µs	125 °C	-55 °C
Toshiba Semiconductor and Storage TLP293-4(LA-TP,E	50 mA	Transistor	1.25 V	300 mV	600 %	DC	80 V	3750 VDC	Surface Mount	4	50 %	0.179 in	16-SO 16-SOIC	4.55 mm	3 µs	3 µs	50 mA	2 µs	3 µs	125 °C	-55 °C
Toshiba Semiconductor and Storage TLP293-4(4LGBTPE	50 mA	Transistor	1.25 V	300 mV	600 %	DC	80 V	3750 VDC	Surface Mount	4	100 %	0.179 in	16-SO 16-SOIC	4.55 mm	3 µs	3 µs	50 mA	2 µs	3 µs	125 °C	-55 °C
Toshiba Semiconductor and Storage TLP293-4(GB-TP,E	50 mA	Transistor	1.25 V	300 mV	600 %	DC	80 V	3750 VDC	Surface Mount	4	100 %	0.179 in	16-SO 16-SOIC	4.55 mm	3 µs	3 µs	50 mA	2 µs	3 µs	125 °C	-55 °C
Toshiba Semiconductor and Storage TLP293-4(V4LATPE	50 mA	Transistor	1.25 V	300 mV	600 %	DC	80 V	3750 VDC	Surface Mount	4	50 %	0.179 in	16-SO 16-SOIC	4.55 mm	3 µs	3 µs	50 mA	2 µs	3 µs	125 °C	-55 °C

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

TLP293-4(LA-TP,E | Datasheet

Safety standards for photocouplers

Application note for phototransistor coupler

TLP293-4 Data sheet/Japanese

Selection Guide Isolators and Solid State Relays 2025Rev1.0

Low-IF couplers-basic properties and application design

Glossary of Photocoupler and Photorelay Terms

Photocouplers and Photorelays