Isolators and Solid State Relays for Enhanced Safety and Efficiency | Toshiba, Photocoupler (phototransistor output), DC input, 3750 Vrms, SO16
Isolators and Solid State Relays for Enhanced Safety and Efficiency | Toshiba, Photocoupler (phototransistor output), DC input, 3750 Vrms, SO16
Isolators and Solid State Relays for Enhanced Safety and Efficiency | Toshiba, Photocoupler (phototransistor output), DC input, 3750 Vrms, SO16
| Part | Current - DC Forward (If) (Max) | Output Type | Voltage - Forward (Vf) (Typ) | Vce Saturation (Max) | Current Transfer Ratio (Max) | Input Type | Voltage - Output (Max) | Voltage - Isolation | Mounting Type | Number of Channels | Current Transfer Ratio (Min) | Package Length | Package Name | Package Width | Turn On Time (Typ) | Turn Off Time (Typ) | Current - Output / Channel | Rise Time (Typ) | Fall Time (Typ) | Operating Temperature (Max) | Operating Temperature (Min) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 50 mA | Transistor | 1.25 V | 300 mV | 600 % | DC | 80 V | 3750 VDC | Surface Mount | 4 | 50 % | 0.179 in | 16-SO 16-SOIC | 4.55 mm | 3 µs | 3 µs | 50 mA | 2 µs | 3 µs | 125 °C | -55 °C |
 Toshiba Semiconductor and Storage | 50 mA | Transistor | 1.25 V | 300 mV | 600 % | DC | 80 V | 3750 VDC | Surface Mount | 4 | 100 % | 0.179 in | 16-SO 16-SOIC | 4.55 mm | 3 µs | 3 µs | 50 mA | 2 µs | 3 µs | 125 °C | -55 °C |
Toshiba Semiconductor and Storage | 50 mA | Transistor | 1.25 V | 300 mV | 600 % | DC | 80 V | 3750 VDC | Surface Mount | 4 | 100 % | 0.179 in | 16-SO 16-SOIC | 4.55 mm | 3 µs | 3 µs | 50 mA | 2 µs | 3 µs | 125 °C | -55 °C |
Toshiba Semiconductor and Storage | 50 mA | Transistor | 1.25 V | 300 mV | 600 % | DC | 80 V | 3750 VDC | Surface Mount | 4 | 50 % | 0.179 in | 16-SO 16-SOIC | 4.55 mm | 3 µs | 3 µs | 50 mA | 2 µs | 3 µs | 125 °C | -55 °C |
Toshiba Semiconductor and Storage | 50 mA | Transistor | 1.25 V | 300 mV | 600 % | DC | 80 V | 3750 VDC | Surface Mount | 4 | 100 % | 0.179 in | 16-SO 16-SOIC | 4.55 mm | 3 µs | 3 µs | 50 mA | 2 µs | 3 µs | 125 °C | -55 °C |
Toshiba Semiconductor and Storage | 50 mA | Transistor | 1.25 V | 300 mV | 600 % | DC | 80 V | 3750 VDC | Surface Mount | 4 | 50 % | 0.179 in | 16-SO 16-SOIC | 4.55 mm | 3 µs | 3 µs | 50 mA | 2 µs | 3 µs | 125 °C | -55 °C |
Toshiba Semiconductor and Storage | 50 mA | Transistor | 1.25 V | 300 mV | 600 % | DC | 80 V | 3750 VDC | Surface Mount | 4 | 100 % | 0.179 in | 16-SO 16-SOIC | 4.55 mm | 3 µs | 3 µs | 50 mA | 2 µs | 3 µs | 125 °C | -55 °C |
 Toshiba Semiconductor and Storage | 50 mA | Transistor | 1.25 V | 300 mV | 600 % | DC | 80 V | 3750 VDC | Surface Mount | 4 | 100 % | 0.179 in | 16-SO 16-SOIC | 4.55 mm | 3 µs | 3 µs | 50 mA | 2 µs | 3 µs | 125 °C | -55 °C |
Toshiba Semiconductor and Storage | 50 mA | Transistor | 1.25 V | 300 mV | 600 % | DC | 80 V | 3750 VDC | Surface Mount | 4 | 50 % | 0.179 in | 16-SO 16-SOIC | 4.55 mm | 3 µs | 3 µs | 50 mA | 2 µs | 3 µs | 125 °C | -55 °C |