NX5020UNBKR
ActiveNexperia USA Inc.
50 V, N-CHANNEL TRENCH MOSFET
NX5020UNBKR
ActiveNexperia USA Inc.
50 V, N-CHANNEL TRENCH MOSFET
Description
General part information
NX5020UNBK Series
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Technical Specifications
Parameters and characteristics for this part
| Specification | NX5020UNBKR |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 330 mA |
| Current - Continuous Drain (Id) (Tc) | 680 mA |
| Drain to Source Voltage (Vdss) | 50 V |
| Drive Voltage (Max Rds On) | 1.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 1 nC |
| Input Capacitance (Ciss) (Max) | 20.5 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-236-3, SOT-23-3, SC-59 |
| Package Name | TO-236AB |
| Power Dissipation (Max) | 1.7 W, 310 mW |
| Rds On (Max) | 1.8 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 950 mV |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Datasheet
Wave soldering profile
Nexperia package poster
Reel pack for SMD, 7"; Q3/T4 product orientation
Questions about package outline drawings
plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body
Reflow soldering profile
plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body