Catalog
50 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Beta
⌘K
50 V, N-channel Trench MOSFET
50 V, N-channel Trench MOSFET
| Part | Vgs (Max) | Drain to Source Voltage (Vdss) | Package / Case | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) | Package Name | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Technology | Operating Temperature (Min) | Operating Temperature (Max) | FET Type | Gate Charge (Max) | Rds On (Max) | Vgs(th) (Max) | Mounting Type | Current - Continuous Drain (Id) (Ta) | Current - Continuous Drain (Id) (Tc) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 20 V | 50 V | SC-59 SOT-23-3 TO-236-3 | 1.7 W 310 mW | 20.5 pF | TO-236AB | 10 V | 1.5 V | MOSFET (Metal Oxide) | -55 °C | 150 °C | N-Channel | 1 nC | 1.8 Ohm | 950 mV | Surface Mount | 330 mA | 680 mA |