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IPD135N03LGBTMA1 - PG-TO252

IPD135N03LGBTMA1

NRND
Infineon Technologies

LV POWER MOS

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IPD135N03LGBTMA1 - PG-TO252

IPD135N03LGBTMA1

NRND
Infineon Technologies

LV POWER MOS

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIPD135N03LGBTMA1
Current - Continuous Drain (Id) @ 25°C30 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]10 nC
Input Capacitance (Ciss) (Max) @ Vds1000 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)31 W
Rds On (Max) @ Id, Vgs13.5 mOhm
Supplier Device PackagePG-TO252-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id [Max]2.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 2500$ 0.27
5000$ 0.25
7500$ 0.24
12500$ 0.23
17500$ 0.23

Description

General part information

IPD135 Series

N-Channel 30 V 30A (Tc) 31W (Tc) Surface Mount PG-TO252-3

Documents

Technical documentation and resources