IPD135 Series

Catalog

LV POWER MOS

Part	Vgs (Max)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Vgs(th) (Max) @ Id [Max]	Package / Case	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id
Infineon Technologies IPD135N03LGBTMA1	20 V	Surface Mount	30 A	4.5 V 10 V	31 W	13.5 mOhm	30 V	N-Channel	-55 °C	175 ░C	1000 pF	PG-TO252-3	2.2 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)	10 nC
Infineon Technologies IPD135N03LGATMA1	20 V	Surface Mount	30 A	4.5 V 10 V	31 W	13.5 mOhm	30 V	N-Channel	-55 °C	175 ░C	1000 pF	PG-TO252-3	2.2 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)	10 nC
Infineon Technologies IPD135N08N3GATMA1	20 V	Surface Mount	45 A	6 V 10 V	79 W	13.5 mOhm	80 V	N-Channel	-55 °C	175 ░C	1730 pF	PG-TO252-3		DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)	25 nC	3.5 V