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Description

General part information

PMN280ENEA Series

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Technical Specifications

Parameters and characteristics for this part

SpecificationPMN280ENEAX
Current - Continuous Drain (Id) (Ta)1.2 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)6.8 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)190 pF, 190 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseSC-74, SOT-457
Package Name6-TSOP
Power Dissipation (Max)7.5 W, 667 mW
QualificationAEC-Q101
Rds On (Max)385 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.7 V

Pricing

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CAD

3D models and CAD resources for this part