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100 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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100 V, N-channel Trench MOSFET
100 V, N-channel Trench MOSFET
| Part | Mounting Type | Input Capacitance (Ciss) (Max) | Vgs(th) (Max) | Power Dissipation (Max) | Grade | Technology | Package / Case | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Qualification | Package Name | FET Type | Vgs (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Gate Charge (Max) | Current - Continuous Drain (Id) (Ta) | Drain to Source Voltage (Vdss) | Rds On (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | Surface Mount | 190 pF 190 pF | 2.7 V | 7.5 W 667 mW | Automotive | MOSFET (Metal Oxide) | SC-74 SOT-457 | 10 V | 4.5 V | AEC-Q101 | 6-TSOP | N-Channel | 20 V | -55 °C | 175 °C | 6.8 nC | 1.2 A | 100 V | 385 mOhm |