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S26KS512SDPBHI020

S26KS512SDPBHI020

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INFINEON

FLASH MEMORY, PARALLEL NOR, 512 MBIT, 64M X 8BIT, CFI, PARALLEL, FBGA, 24 PINS

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S26KS512SDPBHI020

S26KS512SDPBHI020

Active
INFINEON

FLASH MEMORY, PARALLEL NOR, 512 MBIT, 64M X 8BIT, CFI, PARALLEL, FBGA, 24 PINS

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Description

General part information

S26KS512 Series

S26KS512SDPBHI020 is a Hyper Flash™ memory. It features a hyper bus low signal count DDR interface, that achieves high-speed read throughput. The DDR protocol transfers two data bytes per clock cycle on the data (DQ) signals. A read or write access for the Hyper Flash consists of a series of 16bit wide, one-clock cycle data transfers at the internal Hyper Flash core and two corresponding 8bit wide, one-half-clock-cycle data transfers on the DQ signals. Both data and command/address information are transferred in DDR fashion over the 8bit data bus. The clock input signals are used for signal capture by the Hyper Flash device when receiving command/address/data information on the DQ signals. The read data strobe (RWDS) is an output from the Hyper Flash device that indicates when data is being transferred from the memory to the host. RWDS is referenced to the rising and falling edges of CK during the data transfer portion of read operations.

Technical Specifications

Parameters and characteristics for this part

SpecificationS26KS512SDPBHI020
Access Time96 ns
Clock Frequency166 MHz
Memory Depth64 M
Memory FormatFLASH
Memory Interface (Type)HyperBus
Memory Size512 Mb
Memory TypeNon-Volatile
Memory Width8 bit
Mounting TypeSurface Mount
Operating Temperature (Max)85 °C
Operating Temperature (Min)-40 °C
Package / Case24-VBGA
Package Length6 mm
Package Name24-FBGA
Package Width8 mm
TechnologyFLASH - NOR
Voltage - Supply (Maximum)1.95 V
Voltage - Supply (Minimum)1.7 V

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