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S26KS512SDPBHV020

S26KS512SDPBHV020

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INFINEON

FLASH MEMORY, PARALLEL NOR, 512 MBIT, 64M X 8BIT, PARALLEL, FBGA, 24 PINS

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S26KS512SDPBHV020

S26KS512SDPBHV020

Active
INFINEON

FLASH MEMORY, PARALLEL NOR, 512 MBIT, 64M X 8BIT, PARALLEL, FBGA, 24 PINS

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Description

General part information

S26KS512 Series

S26KS512SDPBHV020 is a S26KS512S HYPERFLASH™ high-speed CMOS, MIRRORBIT™ NOR flash device with the HYPERBUS™ low signal count DDR interface, that achieves high speed read throughput. The DDR protocol transfers two data bytes per clock cycle on the data (DQ) signals. A read or write access for the HYPERFLASH™ consists of a series of 16-bit wide, one clock cycle data transfers at the internal HYPERFLASH™ core and two corresponding 8-bit wide, one-half-clock-cycle data transfers on the DQ signals. Command/address/write-data values are center aligned with the clock edges and read-data values are edge aligned with the transitions of RWDS. During linear operation accesses start at a selected location and continue in a sequential manner until the read operation is terminated, when CS# returns HIGH. Write transactions transfer one or more 16-bit values.

Technical Specifications

Parameters and characteristics for this part

SpecificationS26KS512SDPBHV020
Access Time96 ns
Clock Frequency166 MHz
Memory Depth64 M
Memory FormatFLASH
Memory Interface (Type)HyperBus
Memory Size512 Mb
Memory TypeNon-Volatile
Memory Width8 bit
Mounting TypeSurface Mount
Operating Temperature (Max)105 °C
Operating Temperature (Min)-40 °C
Package / Case24-VBGA
Package Length6 mm
Package Name24-FBGA
Package Width8 mm
TechnologyFLASH - NOR
Voltage - Supply (Maximum)1.95 V
Voltage - Supply (Minimum)1.7 V

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