TP5335K1-G-VAO
ActiveP-CHANNEL ENHANCEMENT MODE MOSFET
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TP5335K1-G-VAO
ActiveP-CHANNEL ENHANCEMENT MODE MOSFET
Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | TP5335K1-G-VAO | TP5335 Series |
|---|---|---|
| - | - | |
| Current - Continuous Drain (Id) @ 25°C | 85 mA | 85 mA |
| Drain to Source Voltage (Vdss) | 350 V | 350 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V | 4.5 - 10 V |
| FET Type | P-Channel | P-Channel |
| Grade | - | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 110 pF | 110 pF |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature [Max] | 150 °C | 150 °C |
| Operating Temperature [Min] | -55 °C | -55 °C |
| Package / Case | SOT-23-3, TO-236-3, SC-59 | SOT-23-3, TO-236-3, SC-59, 6-VDFN Exposed Pad |
| Power Dissipation (Max) | 360 mW | 360 mW |
| Qualification | - | AEC-Q100 |
| Rds On (Max) @ Id, Vgs | 30 Ohm | 30 Ohm |
| Supplier Device Package | SOT-23-3 | SOT-23-3, 6-DFN (2x2) |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V | 20 V |
| Vgs(th) (Max) @ Id | 2.4 V | 2.4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Microchip Direct | T/R | 1 | $ 1.13 | |
| 25 | $ 0.95 | |||
| 100 | $ 0.87 | |||
| 1000 | $ 0.72 | |||
| 5000 | $ 0.65 | |||
TP5335 Series
P-Channel Enhancement Mode MOSFET
| Part | FET Type | Vgs(th) (Max) @ Id | Technology | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Package / Case | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Rds On (Max) @ Id, Vgs | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Qualification | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology TP5335K1-G-VAO | P-Channel | 2.4 V | MOSFET (Metal Oxide) | 85 mA | 110 pF | 360 mW | SC-59, SOT-23-3, TO-236-3 | Surface Mount | -55 °C | 150 °C | SOT-23-3 | 30 Ohm | 20 V | 4.5 V, 10 V | 350 V | ||
Microchip Technology TP5335K1-G | |||||||||||||||||
Microchip Technology TP5335MF-G-VAO | P-Channel | 2.4 V | MOSFET (Metal Oxide) | 85 mA | 110 pF | 360 mW | 6-VDFN Exposed Pad | Surface Mount | -55 °C | 150 °C | 6-DFN (2x2) | 30 Ohm | 20 V | 4.5 V, 10 V | 350 V | AEC-Q100 | Automotive |
Description
General part information
TP5335 Series
TP5335 is a low threshold enhancement-mode (normally-off) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.