TP5335 Series

P-Channel Enhancement Mode MOSFET

Catalog

P-Channel Enhancement Mode MOSFET

Part	FET Type	Vgs(th) (Max) @ Id	Technology	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Package / Case	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Qualification	Grade
Microchip Technology TP5335K1-G-VAO	P-Channel	2.4 V	MOSFET (Metal Oxide)	85 mA	110 pF	360 mW	SC-59, SOT-23-3, TO-236-3	Surface Mount	-55 °C	150 °C	SOT-23-3	30 Ohm	20 V	4.5 V, 10 V	350 V
Microchip Technology TP5335K1-G
Microchip Technology TP5335MF-G-VAO	P-Channel	2.4 V	MOSFET (Metal Oxide)	85 mA	110 pF	360 mW	6-VDFN Exposed Pad	Surface Mount	-55 °C	150 °C	6-DFN (2x2)	30 Ohm	20 V	4.5 V, 10 V	350 V	AEC-Q100	Automotive

Catalog

P-Channel Enhancement Mode MOSFET

Key Features

• + High input impedance and high gain

• + Low power drive requirement

• + Ease of paralleling

• + Low CISS and fast switching speeds

• + Excellent thermal stability

• + Integral source-drain diode

• + Free from secondary breakdown

Description

TP5335 is a low threshold enhancement-mode (normally-off) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.